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| AP9930M Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Full Bridge Application on LCD Monitor Inverter SO-8 N1G P1S/P2S P1G P2G N2D/P2D 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) N2G N1S/N2S N1D/P1D 30V 33m 6.3A -30V 55m -5.1A ID P-CH BVDSS RDS(ON) ID P1S P1G P2S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. N1G P2G P1N1D P2N2D N2G N1S N2S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 25 6.3 4.2 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 25 -5.1 -3.4 -20 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200612032 AP9930M N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. Max. Units 0.037 33 60 3 1 25 100 - V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS=10V, ID=5A VGS=4.5V, ID=3A 5.2 7.1 2.3 3.8 7.2 10.4 18 7.8 600 230 94 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=25V ID=5A VDS=15V VGS=4.5V VDS=15V ID=1A RG=6,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.7A, VGS=0V IS=1.7A, VGS=0V dI/dt=100A/s Min. - Typ. Max. Units 21.4 16 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge AP9930M P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=250uA 2 Min. -30 -1 - Typ. -0.037 Max. Units 55 100 -3 -1 -25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 25V ID=-5A VDS=-15V VGS=-4.5V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz 4.8 7.3 2.5 3.8 10.8 7.6 19.6 17.5 486 185.5 133.8 Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.7A, VGS=0V IS=-1.7A, VGS=0V dI/dt=-100A/s Min. - Typ. 21 15 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. AP9930M N-Channel 25 25 T A =25 C 20 o 10V 8.0V 6.0V ID , Drain Current (A) 4.0V 20 T A =150 o C 10V 8.0V 6.0V ID , Drain Current (A) 15 15 4.0V 10 10 V G =3.0V 5 5 V G =3.0V 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 45 1.8 40 I D =5A T A =25 Normalized RDS(ON) I D =5A 1.6 V G =10V 1.4 RDS(ON) (m ) 35 1.2 30 1.0 25 0.8 20 0.6 3 4 5 6 7 8 9 10 11 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 10.00 1.8 1.00 T j =150 o C T j =25 o C VGS(th) (V) 1.6 IS(A) 1.4 0.10 1.2 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9930M N-Channel 12 1000 f=1.0MHz Ciss VGS , Gate to Source Voltage (V) 10 I D =4.5A V DS =15V Coss C (pF) 8 6 100 Crss 4 2 0 0 2 4 6 8 10 12 14 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 DUTY=0.5 Normalized Thermal Response (Rthja) 10 0.2 1ms ID (A) 10ms 100ms 0.1 0.1 0.1 0.05 1 0.02 0.01 PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135/W 0.01 Single Pulse 1s T A =25 o C Single Pulse DC 1 10 100 0.01 0.001 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP9930M P-Channel 25 25 T A =25 o C 20 -10V -8.0V -ID , Drain Current (A) -6.0V 20 T A =150 o C -10V -8.0V -6.0V -ID , Drain Current (A) 15 15 -4.0V 10 10 -4.0V 5 5 V G =-3.0V 0 0 1 2 3 4 5 6 0 0 1 2 3 4 V G =-3.0V 5 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.8 90 I D =-5A T A =25 I D =-5A 1.6 V G = -10V 80 Normalized RDS(ON) 3 4 5 6 7 8 9 10 11 1.4 RDS(ON) (m ) 70 1.2 60 1 50 40 0.8 30 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 10.00 2.5 1.00 T j =150 o C T j =25 o C -VGS(th) (V) -IS(A) 2 0.10 1.5 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1 -50 0 50 100 150 -V SD ,Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9930M P-Channel 14 10000 f=1.0MHz 12 -VGS , Gate to Source Voltage (V) I D =-5A V DS =-15V 1000 10 8 C (pF) Ciss Coss Crss 100 6 4 2 0 10 0 2 4 6 8 10 12 14 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 DUTY=0.5 Normalized Thermal Response (Rthja) 0.2 10 1ms 10ms -ID (A) 1 0.1 0.1 0.05 100ms 1s 0.1 0.02 0.01 PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135/W 0.01 Single Pulse T A =25 o C Single Pulse 0.01 0.1 1 10 DC 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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